Product Information

TK1K7A60F,S4X

TK1K7A60F,S4X electronic component of Toshiba

Datasheet
MOSFET TO-220SIS PD=35W 1MHz PWR MOSFET TRNS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2557 ea
Line Total: USD 1.26

120 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
67 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8721
10 : USD 0.7344
100 : USD 0.5481
500 : USD 0.4865
1000 : USD 0.401
5000 : USD 0.401
10000 : USD 0.3856

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

TK1K7A60F MOSFETs Silicon N-Channel MOS (-MOS) TK1K7A60FTK1K7A60FTK1K7A60FTK1K7A60F 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Power Supplies 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Easy to control Gate switching (2) Low drain-source on-resistance: R = 1.41 (typ.) DS(ON) (3) Enhancement mode: V = 2 to 4 V (V = 10 V, I = 0.46 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 4 A D Drain current (pulsed) (Note 1) I 16 DP Power dissipation (T = 25 ) P 35 W c D Single-pulse avalanche energy (Note 2) E 106 mJ AS Single-pulse avalanche current I 4 A AS Reverse drain current (DC) (Note 1) I 4 DR Reverse drain current (pulsed) (Note 1) I 16 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2018-09 2018 2018-09-25 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TK1K7A60F 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 3.57 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 11.7 mH, I = 4 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2018 2018-09-25 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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