Product Information

TK20A60U(STA4,Q,M)

TK20A60U(STA4,Q,M) electronic component of Toshiba

Datasheet
MOSFET N Trench 600V 20A 5V @ 1mA 190 mΩ @ 10A,10V SC-67 RoHS

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.3316 ea
Line Total: USD 5.33

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 21 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 5.3316
10 : USD 4.7198
50 : USD 4.3374
100 : USD 3.945
500 : USD 3.6521
1000 : USD 3.5779

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The Toshiba TK20A60U(STA4,Q,M) is an N-Channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a 600V drain-to-source voltage rating and 20A continuous drain current access. It is a “Trench” type of MOSFET with improved stray inductance and efficiency characteristics. It has a low input gate capacitance and low resistance between gate and source. The MOSFET is compliant to the RoHS (Restriction of Hazardous Substances) Directive and is supplied in an SC-67 surface-mount package. The drain-source on-state resistance is 190mO at 10A, 10V and the gate-source threshold voltage is 5V @ 1mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TS4

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