Product Information

TK25V60X,LQ

TK25V60X,LQ electronic component of Toshiba

Datasheet
Trans MOSFET N-CH 600V 25A 8-Pin DFN

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 2.8471 ea
Line Total: USD 7117.75

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 2500
Multiples : 2500

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TK25V60X,LQ
Toshiba

2500 : USD 4.3386
5000 : USD 4.1041
10000 : USD 3.8696
15000 : USD 3.635
20000 : USD 3.4006

0 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 2500
Multiples : 2500

Stock Image

TK25V60X,LQ
Toshiba

2500 : USD 2.7333

     
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TK25V60X MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25V60XTK25V60XTK25V60XTK25V60X 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.11 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: V = 2.5 to 3.5 V (V = 10 V, I = 1.2 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. DFN8x8 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 25 A D Drain current (pulsed) (Note 1) I 100 DP Power dissipation (T = 25) P 180 W c D Single-pulse avalanche energy (Note 2) E 306 mJ AS Avalanche current I 6.2 A AR Reverse drain current (DC) (Note 1) I 25 DR Reverse drain current (pulsed) (Note 1) I 100 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2014-06 2014-05-12 1 Rev.2.0TK25V60X 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.694 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 13.9 mH, R = 25 , I = 6.2 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-05-12 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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