Product Information

NVMTS0D4N04CTXG

NVMTS0D4N04CTXG electronic component of ON Semiconductor

Datasheet
MOSFET AFSM T6 40V SG NCH

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 2.5751 ea
Line Total: USD 7725.3

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 3000
Multiples : 3000

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NVMTS0D4N04CTXG
ON Semiconductor

3000 : USD 7.7738
6000 : USD 7.6963
9000 : USD 7.62
12000 : USD 7.5437
15000 : USD 7.4675
24000 : USD 7.3937
30000 : USD 7.3188
75000 : USD 7.2463
150000 : USD 7.2063

0 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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NVMTS0D4N04CTXG
ON Semiconductor

1 : USD 9.3406
10 : USD 6.1236
25 : USD 5.7888
100 : USD 5.0112
500 : USD 4.266
1000 : USD 3.6288
3000 : USD 3.618

     
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RoHS - XON
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Vds - Drain-Source Breakdown Voltage
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DATA SHEET www.onsemi.com MOSFET Power, Single V R MAX I MAX (BR)DSS DS(ON) D 40 V 0.45 m 10 V 558 A N-Channel 40 V, 0.45 m , 558 A D (58) NVMTS0D4N04C Features G (1) Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) S (24) Low Q and Capacitance to Minimize Driver Losses G NCHANNEL MOSFET Power 88 Package, Industry Standard AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS TDFNW8 GatetoSource Voltage V 20 V GS CASE 507AP Continuous Drain T = 25C I 558 A C D Current R JC T = 100C 394.8 (Notes 1, 3) C Steady MARKING DIAGRAM State Power Dissipation T = 25C P 244 W C D R (Note 1) JC T = 100C 122 C Continuous Drain T = 25C I 79.8 A A D XXXXXXXX Current R JA T = 100C 56.4 (Notes 1, 2, 3) A AWLYWW Steady State Power Dissipation T = 25C P 5.0 W A D R (Notes 1, 2) JA T = 100C 2.5 A XXX = Device Code Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM (8 AN characters max) A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 WL = 2digit Wafer Lot Code Y = Year Code Source Current (Body Diode) I 203.4 A S WW = Work Week Code Single Pulse DraintoSource Avalanche E 2236 mJ AS Energy (I = 70 A) L(pk) ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 0.61 C/W JC JunctiontoAmbient Steady State (Note 2) R 30 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2021 Rev. 7 NVMTS0D4N04C/DNVMTS0D4N04C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 7.78 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 8.49 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 0.38 0.45 m DS(on) GS D Forward Transconductance g V =15 V, I = 50 A 300 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 16500 ISS Output Capacitance C 8310 V = 0 V, f = 0.1 MHz, V = 20 V pF OSS GS DS Reverse Transfer Capacitance C 390 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 251 G(TOT) GS DS D Threshold Gate Charge Q 40 G(TH) nC GatetoSource Charge Q 62.4 GS V = 10 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 49.2 GD Plateau Voltage V 4.09 V GP Gate Resistance R 0.9 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 57 d(ON) Rise Time t 51.5 r V = 10 V, V = 20 V, GS DS ns I = 50 A, R = 6 D G TurnOff Delay Time t 201 d(OFF) Fall Time t 76.8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.58 J Reverse Recovery Time t 121 RR Charge Time t 71.4 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 49.6 b Reverse Recovery Charge Q 336 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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