Product Information

TK2A65D(STA4,Q,M)

TK2A65D(STA4,Q,M) electronic component of Toshiba

Datasheet
Toshiba MOSFET N-Ch MOS 2A 650V 30W 380pF 3.26
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3029 ea
Line Total: USD 2.3

78 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
67 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 1.38
10 : USD 1.2305
100 : USD 0.8924
500 : USD 0.7774
1000 : USD 0.6291
2500 : USD 0.6233
5000 : USD 0.6221
10000 : USD 0.6175

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

TK2A65D MOSFETs Silicon N-Channel MOS (-MOS) TK2A65DTK2A65DTK2A65DTK2A65D 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 2.8 (typ.) DS(ON) (2) High forward transfer admittance: Y = 1.5 S (typ.) fs (3) Low leakage current: I = 10 A (max) (V = 650 V) DSS DS (4) Enhancement mode: V = 2.4 to 4.4 V (V = 10 V, I = 1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 2 A D Drain current (pulsed) (Note 1) I 8 DP Power dissipation (T = 25) P 30 W c D Single-pulse avalanche energy (Note 2) E 195 mJ AS Avalanche current I 2 A AR Repetitive avalanche energy (Note 3) E 3.0 mJ AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2009-09 2013-12-26 1 Rev.2.0TK2A65D 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 4.17 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 86 mH, R = 25 , I = 2 A DD ch G AR Note 3: Repetitive rating pulse width limited by maximum channel temperature Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2013-12-26 2 Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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