Product Information

TK30S06K3L(T6L1,NQ

TK30S06K3L(T6L1,NQ electronic component of Toshiba

Datasheet
Toshiba MOSFET N-Ch MOS 30A 60V 30W 1350pF 0.018
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.3324 ea
Line Total: USD 3.33

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 3.3324
10 : USD 1.2538
100 : USD 0.9311
500 : USD 0.7699
1000 : USD 0.6078
2000 : USD 0.566
4000 : USD 0.5332
10000 : USD 0.5143

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

TK30S06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK30S06K3LTK30S06K3LTK30S06K3LTK30S06K3L 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 14 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (4) Enhancement mode: V = 2.0 to 3.0 V (V = 10 V, I = 1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2011-04 2014-08-04 1 Rev.5.0TK30S06K3L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 30 A D Drain current (pulsed) (Note 1) I 60 DP Power dissipation (T = 25) P 58 W c D Single-pulse avalanche energy (Note 2) E 32 mJ AS Avalanche current I 30 A AR Channel temperature (Note 3) T 175 ch Storage temperature (Note 3) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.6 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: V = 25 V, T = 25 (initial), L = 48 H, R = 1 , I = 30 A DD ch G AR Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-08-04 2 Rev.5.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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