Product Information

TK31N60W5,S1VF

TK31N60W5,S1VF electronic component of Toshiba

Datasheet
Toshiba MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.2021 ea
Line Total: USD 8.2

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 30
Multiples : 1
30 : USD 6.8705
50 : USD 6.8016
100 : USD 6.734
250 : USD 6.6664
500 : USD 6.6001
1000 : USD 6.5338
2500 : USD 6.4688
3000 : USD 6.4038
5000 : USD 6.3401
10000 : USD 6.2764

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 30
Multiples : 30
30 : USD 6.8134
60 : USD 6.4451
120 : USD 6.0768
180 : USD 5.7085
240 : USD 5.3402

0 - WHS 3


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 8.2021
10 : USD 5.5716
30 : USD 4.4842
120 : USD 4.3496
270 : USD 4.1114
510 : USD 3.7179

0 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2
Multiples : 1
2 : USD 5.8626
10 : USD 5.3193
30 : USD 4.8344
120 : USD 4.5555

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Factory Pack Quantity :
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

TK31N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK31N60W5TK31N60W5TK31N60W5TK31N60W5 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Fast reverse recovery time: t = 135 ns (typ.) rr (2) Low drain-source on-resistance: R = 0.082 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: V = 3 to 4.5 V (V = 10 V, I = 1.5 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 Start of commercial production 2013-10 2014-02-25 1 Rev.2.0TK31N60W5 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 30.8 A D Drain current (pulsed) (Note 1) I 123 DP Power dissipation (T = 25) P 230 W c D Single-pulse avalanche energy (Note 2) E 437 mJ AS Avalanche current I 7.7 A AR Reverse drain current (DC) (Note 1) I 30.8 DR Reverse drain current (pulsed) (Note 1) I 123 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.543 /W th(ch-c) Channel-to-ambient thermal resistance R 50 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 12.9 mH, R = 25 , I = 7.7 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-25 2 Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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