Product Information

TK32E12N1,S1X

TK32E12N1,S1X electronic component of Toshiba

Datasheet
Toshiba MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4357 ea
Line Total: USD 1.44

169 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 1.2805
10 : USD 1.0878
30 : USD 0.9827
100 : USD 0.8631
500 : USD 0.8089
1000 : USD 0.7856

169 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4357
10 : USD 1.177
100 : USD 0.9516
500 : USD 0.8294
1000 : USD 0.6834
5000 : USD 0.6692
10000 : USD 0.6561

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

TK32E12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK32E12N1TK32E12N1TK32E12N1TK32E12N1 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 11.0 m (typ.) (V = 10 V) DS(ON) GS (2) Low leakage current: I = 10 A (max) (V = 120 V) DSS DS (3) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.5 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 120 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25) (Note 1) I 60 A c D Drain current (DC) (Note 1), (Note 2) I 32 D Drain current (pulsed) (t = 1 ms) (Note 1) I 110 DP Power dissipation (T = 25) P 98 W c D Single-pulse avalanche energy (Note 3) E 48 mJ AS Avalanche current I 32 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-07 2014-06-30 1 Rev.4.0TK32E12N1 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 1.27 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted with heatsink so that R becomes 4.16/W. th(ch-a) Note 3: V = 80 V, T = 25 (initial), L = 46.1 H, I = 32 A DD ch AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-06-30 2 Rev.4.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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