TK32A12N1,S4X Toshiba

TK32A12N1,S4X electronic component of Toshiba
TK32A12N1,S4X Toshiba
TK32A12N1,S4X MOSFETs
TK32A12N1,S4X  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TK32A12N1,S4X MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK32A12N1,S4X MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TK32A12N1,S4X
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET MOSFET NCh11ohm VGS10V10uAVDS120V
Datasheet: TK32A12N1,S4X Datasheet (PDF)
Price (USD)
1: USD 2.1625 ea
Line Total: USD 2.16 
Availability : 73
  
Ship by Mon. 29 Sep to Wed. 01 Oct
QtyUnit Price
1$ 2.1625
10$ 1.14
100$ 0.9031
500$ 0.7568
1000$ 0.7172
2500$ 0.715
5000$ 0.6886

Availability 73
Ship by Mon. 29 Sep to Wed. 01 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.1625
10$ 1.14
100$ 0.9031
500$ 0.7568
1000$ 0.7172
2500$ 0.715
5000$ 0.6886

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK32A12N1,S4X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK32A12N1,S4X and other electronic components in the MOSFETs category and beyond.

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TK32A12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK32A12N1TK32A12N1TK32A12N1TK32A12N1 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 11.0 m (typ.) (V = 10 V) DS(ON) GS (2) Low leakage current: I = 10 A (max) (V = 120 V) DSS DS (3) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.5 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 120 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 60 A D Drain current (DC) (T = 25) (Note 1) I 32 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 110 DP Power dissipation (T = 25) P 30 W c D Single-pulse avalanche energy (Note 3) E 48 mJ AS Avalanche current I 32 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-02 2014-02-07 1 Rev.2.0TK32A12N1 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 4.16 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: V = 80 V, T = 25 (initial), L = 46.1 H, I = 32 A DD ch AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-07 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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