Product Information

TK5A65W,S5X

Hot TK5A65W,S5X electronic component of Toshiba

Datasheet
MOSFET Power MOSFET N-Channel

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6674 ea
Line Total: USD 0.67

165 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
165 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

TK5A65W,S5X
Toshiba

1 : USD 0.6674

132 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

TK5A65W,S5X
Toshiba

1 : USD 1.541
10 : USD 1.3685
100 : USD 1.0948
500 : USD 0.8223
1000 : USD 0.6946
2500 : USD 0.69
5000 : USD 0.69
10000 : USD 0.6774

165 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 11
Multiples : 1

Stock Image

TK5A65W,S5X
Toshiba

11 : USD 0.6674

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
TK5Q60W,S1VQ electronic component of Toshiba TK5Q60W,S1VQ

Toshiba MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC
Stock : 206

TK5P50D(T6RSS-Q) electronic component of Toshiba TK5P50D(T6RSS-Q)

Toshiba MOSFET N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm
Stock : 1319

TK60S06K3L(T6L1,NQ electronic component of Toshiba TK60S06K3L(T6L1,NQ

Toshiba MOSFET N-Ch MOS 60A 60V 88W 2900pF 0.008
Stock : 2000

TK5P60W,RVQ electronic component of Toshiba TK5P60W,RVQ

Toshiba MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 600V 380pF
Stock : 1800

TK5P60WRVQ electronic component of Toshiba TK5P60WRVQ

Trans MOSFET N 600V 5.4A 3-Pin DPAK Emboss T/R
Stock : 0

TK5A80E,S4X electronic component of Toshiba TK5A80E,S4X

MOSFET PWR MOSFET PD=40W F=1MHZ
Stock : 0

TK5A90E,S4X electronic component of Toshiba TK5A90E,S4X

MOSFET PWR MOSFET PD=40W F=1MHZ
Stock : 137

TK5P65W,RQ electronic component of Toshiba TK5P65W,RQ

MOSFET PWR MOSFET PD=60W F=1MHZ
Stock : 1760

TK5R3A06PL,S4X electronic component of Toshiba TK5R3A06PL,S4X

MOSFET TO-220SIS PD=36W 1MHz PWR MOSFET TRNS
Stock : 159

TK5Q65W,S1Q electronic component of Toshiba TK5Q65W,S1Q

Trans MOSFET N-CH 650V 5.2A 3-Pin IPAK
Stock : 0

Image Description
TK5A60W,S4VX electronic component of Toshiba TK5A60W,S4VX

Toshiba MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC
Stock : 0

TK56E12N1,S1X electronic component of Toshiba TK56E12N1,S1X

Toshiba MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC
Stock : 0

TK40E10N1,S1X electronic component of Toshiba TK40E10N1,S1X

Toshiba MOSFET 40V N0Ch PWR FET 90A 126W 3000pF
Stock : 0

TK39J60W,S1VQ(O electronic component of Toshiba TK39J60W,S1VQ(O

Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO3PN
Stock : 0

TK39J60W,S1VQ electronic component of Toshiba TK39J60W,S1VQ

Toshiba MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC
Stock : 0

TK32E12N1,S1X electronic component of Toshiba TK32E12N1,S1X

Toshiba MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC
Stock : 175

TK32A12N1,S4X electronic component of Toshiba TK32A12N1,S4X

MOSFET MOSFET NCh11ohm VGS10V10uAVDS120V
Stock : 193

TK25N60X,S1F electronic component of Toshiba TK25N60X,S1F

MOSFET Power MOSFET N-Channel
Stock : 0

TK25A60X,S5X electronic component of Toshiba TK25A60X,S5X

MOSFET Power MOSFET N-Channel
Stock : 83

TK22A10N1,S4X(S electronic component of Toshiba TK22A10N1,S4X(S

Trans MOSFET N-CH Si 100V 52A 3-Pin(3+Tab) TO-220SIS Magazine
Stock : 915

TK5A65W MOSFETs Silicon N-Channel MOS (DTMOS) TK5A65WTK5A65WTK5A65WTK5A65W 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low drain-source on-resistance: R = 1 (typ.) DS(ON) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.5 to 3.5 V(V = 10 V, I = 0.17 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 5.2 A D Drain current (pulsed) (Note 1) I 20.8 DP Power dissipation (T = 25 ) P 30 W c D Single-pulse avalanche energy (Note 2) E 70 mJ AS Avalanche current I 1.3 A AR Reverse drain current (DC) (Note 1) I 5.2 DR Reverse drain current (pulsed) (Note 1) I 20.8 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2014-10 2015 Toshiba Corporation 2015-12-25 1 Rev.4.0TK5A65W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 4.17 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 73.6 mH, R = 25 , I = 1.3 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2015 Toshiba Corporation 2015-12-25 2 Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted