Product Information

TK65E10N1,S1X

TK65E10N1,S1X electronic component of Toshiba

Datasheet
Toshiba MOSFET 100V N-Ch PWR FET 148A 192W 5400pF
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6: USD 1.3529 ea
Line Total: USD 8.12

32 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 6  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
32 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.3474
10 : USD 1.3122
100 : USD 1.286
500 : USD 1.286
1000 : USD 1.286

32 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 6
Multiples : 1
6 : USD 1.3474
10 : USD 1.3122
100 : USD 1.286

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

TK65E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK65E10N1TK65E10N1TK65E10N1TK65E10N1 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 4.0 m (typ.) (V = 10 V) DS(ON) GS (2) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (3) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1,2) I 148 A D Drain current (DC) (Note 1,3) I 65 D Drain current (pulsed) (t = 1 ms) (Note 1) I 296 DP Power dissipation (T = 25) P 192 W c D Single-pulse avalanche energy (Note 4) E 143 mJ AS Avalanche current I 65 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2011-09 2014-06-30 1 Rev.5.0TK65E10N1 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.65 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Package limit is 100 A. Note 3: Device mounted with heatsink so that R becomes 2.77/W. th(ch-a) Note 4: V = 80 V, T = 25 (initial), L = 26.1 H, I = 65 A DD ch AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-06-30 2 Rev.5.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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