TK650A60F MOSFETs Silicon N-Channel MOS (-MOS) TK650A60FTK650A60FTK650A60FTK650A60F 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Power Supplies 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Easy to control Gate switching (2) Low drain-source on-resistance: R = 0.54 (typ.) DS(ON) (3) Enhancement mode: V = 2 to 4 V (V = 10 V, I = 1.16 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 11 A D Drain current (pulsed) (Note 1) I 44 DP Power dissipation (T = 25 ) P 45 W c D Single-pulse avalanche energy (Note 2) E 224 mJ AS Single-pulse avalanche current I 11 A AS Reverse drain current (DC) (Note 1) I 11 DR Reverse drain current (pulsed) (Note 1) I 44 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2017-12 2017-2018 2018-09-25 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TK650A60F 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.77 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 3.25 mH, I = 11 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2017-2018 2018-09-25 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0