Product Information

TK6R7P06PL,RQ

TK6R7P06PL,RQ electronic component of Toshiba

Datasheet
MOSFET N-Ch 60V 1990pF 26nC 74A 66W
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.6614 ea
Line Total: USD 1653.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500
2500 : USD 0.5782
5000 : USD 0.5725
10000 : USD 0.5667
15000 : USD 0.5611
20000 : USD 0.5554
25000 : USD 0.5499
30000 : USD 0.5444
50000 : USD 0.5389
100000 : USD 0.5336

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500
2500 : USD 0.4924

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 2.4842
10 : USD 0.9216
100 : USD 0.6902
500 : USD 0.5695
1000 : USD 0.4808

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

TK6R7P06PL MOSFETs Silicon N-channel MOS (U-MOS-H) TK6R7P06PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: Q = 8.7 nC (typ.) SW (3) Small output charge: Q = 23 nC (typ.) oss (4) Low drain-source on-resistance: R = 5.0 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (6) Enhancement mode: V = 1.5 to 2.5 V (V = 10 V, I = 0.3 mA) th DS D 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK Start of commercial production 2017-04 2016-2021 2021-01-27 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0TK6R7P06PL 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1) I 46 A c D Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 74 D Drain current (pulsed) (t = 100 s) (Note 1) I 190 DP Power dissipation (T = 25 ) P 66 W c D Single-pulse avalanche energy (Note 3) E 14 mJ AS Single-pulse avalanche current (Note 3) I 46 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 2.24 /W c th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited 46 A by package capability Note 3: V = 48 V, T = 25 (initial), L = 5.3 H, I = 46 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016-2021 2021-01-27 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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