Product Information

TK8P25DA,RQ(S

TK8P25DA,RQ(S electronic component of Toshiba

Datasheet
Trans MOSFET N-CH 250V 7.5A 3-Pin(2+Tab) DPAK
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0325 ea
Line Total: USD 1.03

778 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
778 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.2773
10 : USD 0.9492
30 : USD 0.7325
100 : USD 0.6449
500 : USD 0.6063
1000 : USD 0.5887

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Brand
Operating Temp Range
Pin Count
Number Of Elements
Package Type
Operating Temperature Classification
Gate-Source Voltage Max
Rad Hardened
Type
Drain-Source On-Volt
LoadingGif

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Additional Infomation About Product

TK8P25DA MOSFETs Silicon N-Channel MOS (-MOS) TK8P25DATK8P25DATK8P25DATK8P25DA 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low drain-source on-resistance: R = 0.41 (typ.) DS(ON) (2) Low leakage current: I = 10 A (max) (V = 250 V) DSS DS (3) Enhancement mode: V = 1.5 to 3.5 V (V = 10 V, I = 1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2011-03 2015 Toshiba Corporation 2015-08-03 1 Rev.4.0TK8P25DA 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 250 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 7.5 A D Drain current (pulsed) (Note 1) I 30 DP Power dissipation (T = 25) P 55 W c D Single-pulse avalanche energy (Note 2) E 45 mJ AS Avalanche current (Note 3) I 7.5 A AR Reverse drain current (DC) (Note 1) I 7.5 DR Reverse drain current (pulsed) (Note 1) I 30 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.27 /W th(ch-c) Channel-to-ambient thermal resistance R 125 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 50 V, T = 25 (initial), L = 1.33 mH, R = 25 , I = 7.5 A DD ch G AR Note 3: Repetitive rating pulse width limited by maximum channel temperature Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2015 Toshiba Corporation 2015-08-03 2 Rev.4.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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