Product Information

TLP2200

TLP2200 electronic component of Toshiba

Datasheet
OPTOCOUPLER, SCHIMITT TRIGGER
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.184 ea
Line Total: USD 2.18

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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TLP2200
Toshiba

1 : USD 2.4048
10 : USD 1.5793
100 : USD 1.2688

Read More Specifications

     
Manufacturer
Product Category
Data Rate
Isolation Voltage
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
Svhc
Approval Bodies
Input Current
Operating Temperature Max
Operating Temperature Min
Operating Temperature Range
Optocoupler Output Type
Output Voltage
Output Voltage Max
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Additional Infomation About Product

TLP2200 TOSHIBA Photocoupler GaA As Ired & Photo-IC TLP2200 Isolated Buss Driver Unit in mm High Speed Line Receiver Micropocessor System Interfaces MOS FET Gate Driver Direct Replacement For HCPL 2200 The TOSHIBA TLP2200 consists of a GaAAs light emitting diode and integrated high gain, high speed photodetector. This unit is 8 lead DIP package. The detector has a three state output stage that eliminates the need for pull up resistor, and builtin schmitt trigger. The detector IC has an internal shield that provides a guaranteed common mode transient immunity of 1000V / s. Input current: I = 1.6mA F Power supply voltage: V = 4.5~20V CC TOSHIBA 11 10C4 Switching speed: 2.5MBd guaranteed Common mode transient immunity: 1000V / s (min.) Weight: 0.54 g Guaranteed performance over temp: 0~85C Isolation voltage: 2500Vrms(min.) Pin Configuration (top view) UL recognized: UL 1577, file No. E67349 1: N.C. 1 8 V CC Truth Table (positive logic) 2: Anode 3: Cathode 2 7 4: N.C. Input Enable Output 3 6 5: GND H H Z GND 6: V (enable) E 4 5 L H Z 7: V (output) SHIELD O H L H 8: V CC L L L Schematic I CC I F V CC I 8 O 2 V O 7 I V E F 3 V E 6 GND SHIELD 5 1 2002-09-25 TLP2200 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input current, on I 1.6 5 mA F(ON) Input current, off I 0 0.1 mA F(OFF) Supply voltage V 4.5 20 V CC Enable voltage high V 2.0 20 V EH Enable voltage low V 0 0.8 V EL Fan out (TTL load) N 4 Operating temperature T 0 85 C opr Absolute Maximum Ratings (no derating required up to 70C) Characteristic Symbol Rating Unit Forward current I 10 mA F I 1 A Peak transient forward current (Note 1) FPT V 5 V Reverse voltage R Output current I 25 mA O Supply voltage V 0.5~20 V CC Output voltage V 0.5~20 V O Three state enable voltage V 0.5~20 V E Total package power dissipation (Note 2) P 210 mW T Operating temperature range T 40~85 C opr Storage temperature range T 55~125 C stg Lead solder temperature (10s) (**) T 260 C sol Isolation voltage (AC 1min., R.H. 60%,Ta = 25C) BV 2500 Vrms S (Note 3) (Note 1) Pulse width 1s 300pps. (Note 2) Derate 4.5mW / C above 70C ambient temperature. (Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted together (**) 1.6mm below seating plane. 2 2002-09-25 Det e ct or LE D

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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