TPC8048-H(TE12L,V)

TPC8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8048-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: Q = 17 nC (typ.) SW Low drain-source ON-resistance: R = 4.6 m (typ.) DS (ON) High forward transfer admittance: Y = 60 S (typ.) fs Low leakage current: I = 10 A (max) (V = 60 V) DSS DS Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 1.0 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V 60 V DSS Drain-gate voltage (R = 20 k) V 60 V GS DGR Gate-source voltage V 20 V GSS JEDEC DC (Note 1) I 16 D Drain current A JEITA Pulsed (Note 1) I 64 DP Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B P 1.9 W D (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) P 1.0 W D (Note 2b) Single-pulse avalanche energy Circuit Configuration E 92 mJ AS (Note 3) 8 6 7 5 Avalanche current I 16 A AR Repetitive avalanche energy E 0.05 mJ AR (Tc = 25) (Note 4) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: For Notes 1 to 4, refer to the next page. 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2008-10 1 2013-11-01 TPC8048-H Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65.8 C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 125 C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 5) Note : A line under a Lot No. identifies the indication of product Labels G /RoHS COMPATIBLE or G /RoHS Pb Part No. (or abbreviation code) TPC8048 Please contact your TOSHIBA sales representative for details as to H Lot No. environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and Note of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25C (initial), L = 500 H, R = 25 , I = 16 A DD ch G AR Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2013-11-01