TPCP8011 MOSFETs Silicon N-channel MOS (U-MOS) TPCP8011TPCP8011TPCP8011TPCP8011 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Motor Drivers Mobile Equipment 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : Q = 4.7 nC (typ.) SW (4) Low drain-source on-resistance: R = 25.5 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 40 V) DSS DS (6) Enhancement mode: V = 2 to 3 V (V = 10 V, I = 1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain PS-8 Start of commercial production 2012-12 2016 Toshiba Corporation 2016-02-23 1 Rev.5.0TPCP8011 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 40 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 5 A D Drain current (pulsed) (Note 1) I 20 DP Power dissipation (t = 5 s) (Note 2) P 1.96 W D Power dissipation (t = 5 s) (Note 3) P 0.94 W D Single-pulse avalanche energy (Note 4) E 33.2 mJ AS Avalanche current I 5 A AR Channel temperature (Note 5) T 175 ch Storage temperature (Note 5) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (t = 5 s) (Note 2) R 76.5 /W th(ch-a) Channel-to-ambient thermal resistance (t = 5 s) (Note 3) R 159.5 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: V = 25 V, T = 25 (initial), L = 1.379 mH, R = 1 , I = 5 A DD ch G AR Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016 Toshiba Corporation 2016-02-23 2 Rev.5.0