TPCP8701 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701 Portable Equipment Applications Unit: mm Switching Applications 0.330.05 M A 0.05 8 5 Inverter Lighting Applications Small footprint due to small and thin package High DC current gain : h = 400 to 1000 (I = 0.3 A) FE C 1 4 Low collector-emitter saturation : V = 0.14 V (max) 0.475 CE (sat) B M B 0.05 0.65 High-speed switching : t = 120 ns (typ.) f 2.90.1 A 0.80.05 Maximum Ratings (Ta = 25C) S 0.025 S +0.1 0.170.02 0.28 -0.11 Characteristics Symbol Rating Unit +0.13 1.12 -0.12 +0.13 Collector-base voltage V 100 V CBO 1.12 -0.12 +0.1 V 80 V 0.28 -0.11 CEX 5.Collector2 1.Emitter1 Collector-emitter voltage 6.Collector2 2.Base1 7.Collector1 3.Emitter2 V 50 V CEO 8.Collector1 4.Base2 JEDEC Emitter-base voltage V 7 V EBO JEITA DC (Note 1) I 3.0 C Collector current A TOSHIBA 2-3V1C Pulse (Note 1 ) I 5.0 CP Weight: 0.017 g (typ.) Base current I 300 mA B Single-device Figure 1. 1.77 operation Circuit configuration Collector power Pc (Note 2) W dissipation (t = 10s) Single-device (Top View) value at dual 0.95 operation 87 6 5 Single-device 0.94 operation Collector power Pc (Note 2) W Single-device dissipation (DC) value at dual 0.54 operation Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg 1 2 3 4 Figure 2. Marking Note 1: Please use devices on condition that the junction temperature is below 150C. (Note 3) 2 Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 8 7 6 5 Note 3: on lower left on the marking indicates Pin 1. Type Weekly code: (Three digits) 8701 Week of manufacture (01 for first week of year, continues up to 52 or 53) 1 2 3 4 Year of manufacture Lot No. (One low-order digits of calendar year) (Weekly code) 1 2004-05-11 2.40.1 2.80.1TPCP8701 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 100 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 nA EBO EB C Collector-emitter brakedown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h (1) V = 2 V, I = 0.3 A 400 1000 FE CE C DC current gain h (2) V 2 V, I 1 A 200 = = FE CE C Collector-emitter saturation voltage V I = 1 A, I = 20 mA 0.14 V CE (sat) C B Base-emitter saturation voltage V I = 1 A, I = 20 mA 1.10 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1MHz 13 pF ob CB E Rise time t 40 r See Figure 3 circuit diagram Switching time Storage time t V 30 V, R = 30 500 ns stg CC L I = I = 33.3 mA B1 B2 Fall time t 120 f Figure 3. Switching Time Test Circuit & Timing Chart VCC 20s RL IB1 Output IB1 IB2 Input Duty cycle 1% IB2 2 2004-05-11