TTC004B Bipolar Transistors Silicon NPN Epitaxial Type TTC004BTTC004BTTC004BTTC004B 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Audio-Frequency Amplifiers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High collector voltage: V = 160 V (min) CEO (2) Complementary to TTA004B (3) Small collector output capacitance: C = 12 pF (typ.) ob (4) High transition frequency: f = 100 MHz (typ.) T 3. 3. Packaging and Internal Circuit (Note)Packaging and Internal Circuit (Note) 3. 3. Packaging and Internal Circuit (Note)Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. Start of commercial production 2013-05 2018 2018-02-23 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TTC004B 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Collector-base voltage V 160 V CBO Collector-emitter voltage V 160 CEO Emitter-base voltage V 6 EBO Collector current (DC) (Note 1) I 1.5 A C Collector current (pulsed) (Note 1) I 2.5 CP Base current I 0.5 B Collector power dissipation P 1.5 W C Collector power dissipation (T = 25 ) P 10 c C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . 5. 5. Electrical CharacteristicsElectrical Characteristics 5. 5. Electrical CharacteristicsElectrical Characteristics 5.1. 5.1. 5.1. 5.1. Static Characteristics (TStatic Characteristics (TStatic Characteristics (TStatic Characteristics (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 160 V, I = 0 A 100 nA CBO CB E Emitter cut-off current I V = 6 V, I = 0 A 100 EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 A 160 V (BR)CEO C B DC current gain h V = 5 V, I = 1 mA 80 FE(1) CE C h V = 5 V, I = 0.1 A 140 280 FE(2) CE C Collector-emitter saturation voltage V I = 0.5 A, I = 50 mA 0.5 V CE(sat) C B Base-emitter saturation voltage V I = 0.5 A, I = 50 mA 1.3 V BE(sat) C B 5.2. 5.2. Dynamic Characteristics (TDynamic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) 5.2. 5.2. Dynamic Characteristics (TDynamic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 12 pF ob CB E Transition frequency f V = 10 V, I = 100 mA 100 MHz T CE C 2018 2018-02-23 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0