TP65H070L Series 650V GaN FET PQFN Series Description Features The TP65H070L Series 650V, 72m Gallium Nitride (GaN) JEDEC qualified GaN technology FET are normally-off devices. They combine state-of-the-art Dynamic RDS(on)eff production tested high voltage GaN HEMT and low voltage silicon MOSFET Robust design, defined by technologiesoffering superior reliability and performance. Intrinsic lifetime tests Wide gate safety margin Transphorm GaN offers improved efficiency over silicon, Transient over-voltage capability through lower gate charge, lower crossover loss, and smaller Very low Q RR reverse recovery charge. Reduced crossover loss RoHS compliant and Halogen-free packaging Related Literature AN0009: Recommended External Circuitry for GaN FETs Benefits AN0003: Printed Circuit Board Layout and Probing Improves efficiency/operation frequencies over Si AN0010: Paralleling GaN FETs Enables AC-DC bridgeless totem-pole PFC designs Increased power density Reduced system size and weight Overall lower system cost Ordering Information Easy to drive with commonly-used gate drivers Package Part Number Package GSD pin layout improves high speed design Configuration TP65H070LDG 8 x 8mm PQFN Drain Applications Datacom TP65H070LSG 8 x 8mm PQFN Source Broad industrial PV inverter Servo motor TP65H070LSG TP65H070LDG 8x8 PQFN 8x8 PQFN (bottom view) (bottom view) Key Specifications V (V) 650 DSS S D V (V) 800 (TR)DSS R (m) max* 85 DS(on)eff S D G G Q (nC) typ 89 RR Q (nC) typ 9.3 G * Dynamic on-resistance see Figures 5 and 6 Cascode Schematic Symbol Cascode Device Structure May 15, 2019 2018 Transphorm Inc. Subject to change without notice. tp65h070l.1 1 TP65H070L Series Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a V(TR)DSS Transient drain to source voltage 800 V V Gate to source voltage 20 GSS P Maximum power dissipation T =25C 96 W D C b Continuous drain current T =25C 25 A C I D b Continuous drain current T =100C 16 A C IDM Pulsed drain current (pulse width: 10s) 120 A c (di/dt) Reverse diode di/dt, repetitive 1200 A/s RDMC d (di/dt) Reverse diode di/dt, transient 2600 A/s RDMT T Case -55 to +150 C C Operating temperature T Junction -55 to +150 C J TS Storage temperature -55 to +150 C e T Soldering peak temperature 260 C SOLD Notes: a. In off-state, spike duty cycle D<0.01, spike duration <1s b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Continuous switching operation d. 300 pulses per second for a total duration 20 minutes e. For 10 sec., 1.6mm from the case Thermal Resistance Symbol Parameter Maximum Unit R Junction-to-case 1.3 C/W JC f R Junction-to-ambient 62 C/W JA Notes: 2 f. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm copper area and 70m thickness) May 15, 2019 transphormusa.com tp65h070l.1 2