X-On Electronics has gained recognition as a prominent supplier of IMW120R060M1HXKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IMW120R060M1HXKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IMW120R060M1HXKSA1 Infineon

IMW120R060M1HXKSA1 electronic component of Infineon
IMW120R060M1HXKSA1 Infineon
IMW120R060M1HXKSA1 MOSFETs
IMW120R060M1HXKSA1  Semiconductors

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See Product Specifications
Part No. IMW120R060M1HXKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET SIC DISCRETE
Datasheet: IMW120R060M1HXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.4875 ea
Line Total: USD 19.49 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 27 May to Mon. 02 Jun
MOQ : 1
Multiples : 1
1 : USD 31.9626
10 : USD 28.3165
100 : USD 23.9148
500 : USD 21.2739

0
Ship by Tue. 03 Jun to Fri. 06 Jun
MOQ : 1
Multiples : 1
1 : USD 19.4875
10 : USD 18.6175
30 : USD 17.1129
90 : USD 15.8

0
Ship by Fri. 23 May to Tue. 27 May
MOQ : 1
Multiples : 1
1 : USD 13.4199
10 : USD 11.8475
25 : USD 11.3503
100 : USD 10.2008
250 : USD 9.9937

0
Ship by Fri. 23 May to Tue. 27 May
MOQ : 1
Multiples : 1
1 : USD 23.3527
2 : USD 15.2925
3 : USD 14.4513

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the IMW120R060M1HXKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMW120R060M1HXKSA1 and other electronic components in the MOSFETs category and beyond.

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IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully controllable dV/dt Robust body diode for hard commutation Temperature independent turn-off switching losses Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost Potential applications Energy generation o Solar string inverter and solar optimizer Industrial power supplies o Industrial UPS o Industrial SMPS Infrastructure Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Table 1 Key Performance and Package Parameters Type V I R T Marking Package DS D DS(on) vj,max TC = 25C, Rth(j-c,max) Tvj = 25C, ID = 13A, VGS = 18V IMW120R060M1H 1200V 36A 60m 175C 12M1H060 PG-TO247-3 Datasheet Please read the Important Notice and Warnings at the end of this document 2.2 www.infineon.com page 1 of 17 2020-12-11 IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Ta ble of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 Electrical Characteristics ........................................................................................................ 5 3.1 Static characteristics ............................................................................................................................... 5 3.2 Dynamic characteristics .......................................................................................................................... 6 3.3 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing ................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Datasheet 2 of 17 2.2 2020-12-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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