Product Information

TSA28N50M

TSA28N50M electronic component of Truesemi

Datasheet
MOSFET N Trench 500V 28A 4V @ 250uA 170 mΩ @ 12A,10V TO-3P RoHS

Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.4356 ea
Line Total: USD 2.44

2231 - Global Stock
Ships to you between
Thu. 02 May to Tue. 07 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1714 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 1
Multiples : 1

Stock Image

TSA28N50M
Truesemi

1 : USD 2.1246
10 : USD 1.8406
30 : USD 1.7123
90 : USD 1.5367
450 : USD 1.4579
900 : USD 1.4224

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The Truesemi TSA28N50M is an N-channel trench Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET) with a maximum current rating of 28A, a maximum voltage rating of 500V, a gate threshold voltage of 4V at 250uA, a maximum on resistance of 170 mO at 12A, and a 10V gate-source voltage. It is encapsulated in a three-pin TO-3P RoHS compliant packaging. The N-channel MOSFET has typically high input impedance and low output impedance. It acts like an electronic switch to assist in the switching and amplification of electrical signals in simple and complex circuits. Its high breakdown voltage, low on-state resistance, fast switching speed, and wide temperature range make it suitable for applications in the automotive, industrial control, and consumer electronics industries. The TSA28N50M is RoHS compliant and is a reliable, cost-effective solution for power management design.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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