Product Information

D2203UK

D2203UK electronic component of TT Electronics

Datasheet
RF MOSFET Transistors Silicon DMOS RF FET 5W-12.5V-1GHz PP
Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 86.1525 ea
Line Total: USD 8615.25

0 - Global Stock
MOQ: 100  Multiples: 25
Pack Size: 25

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 100
Multiples : 25

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D2203UK
TT Electronics

100 : USD 86.1525
250 : USD 82.2096
500 : USD 81.702
1000 : USD 81.1944
2000 : USD 80.676
2500 : USD 80.1684
3000 : USD 79.6392
5000 : USD 79.1208
10000 : USD 78.5916

0 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 50
Multiples : 50

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D2203UK
TT Electronics

50 : USD 133.055

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Vgs - Gate-Source Voltage
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

TetraFET D2203UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED B MULTI-PURPOSE SILICON H C DMOS RF FET G 2 3 1 5W 12.5V 1GHz A D E 54 PUSHPULL F I FEATURES SIMPLIFIED AMPLIFIER DESIGN NMKO J SUITABLE FOR BROAD BAND APPLICATIONS DQ VERY LOW C PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 rss PIN 3 DRAIN 2 PIN 4 GATE 2 SIMPLE BIAS CIRCUITS PIN 5 GATE 1 DIM mm Tol. Inches Tol. LOW NOISE A 16.38 0.26 0.645 0.010 B 1.52 0.13 0.060 0.005 C 45 5 45 5 HIGH GAIN 10 dB MINIMUM D 6.35 0.13 0.250 0.005 E 3.30 0.13 0.130 0.005 F 14.22 0.13 0.560 0.005 G 1.27 x 45 0.13 0.05 x 45 0.005 H 1.52 0.13 0.060 0.005 APPLICATIONS I 6.35 0.13 0.250 0.005 J 0.13 0.02 0.005 0.001 VHF/UHF COMMUNICATIONS K 2.16 0.13 0.085 0.005 from 1MHz to 1 GHz M 1.52 0.13 0.060 0.005 N 5.08 MAX 0.200 MAX O 18.90 0.13 0.744 0.005 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 35W D BV Drain Source Breakdown Voltage * 40V DSS BV Gate Source Breakdown Voltage * 20V GSS I Drain Current * 2A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j * Per Side Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 2626 E-mail: sales semelab.co.uk Website: D2203UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit PER SIDE DrainSource Breakdown BV V = 0 I = 10mA 40 V DSS GS D Voltage Zero Gate Voltage I V = 12.5V V = 0 1 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 A GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 17 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 0.2A 0.18 S fs DS D TOTAL DEVICE G Common Source Power Gain P = 5W 10 dB PS O Drain Efficiency V = 12.5V I = 0.2A 40 % DS DQ VSWR Load Mismatch Tolerance f = 1GHz 20:1 PER SIDE C Input Capacitance V = 12.5V V = 5V f = 1MHz 12 pF iss DS GS C Output Capacitance V = 12.5V V = 0 f = 1MHz 10 pF oss DS GS C Reverse Transfer Capacitance V = 12.5V V = 0 f = 1MHz 1 pF rss DS GS * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA R Thermal Resistance Junction Case Max. 5.0C / W THjcase Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 2626 E-mail: sales semelab.co.uk Website:

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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