Product Information

OP600C

OP600C electronic component of TT Electronics

Datasheet
Phototransistors Photo Transistor

Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.2315 ea
Line Total: USD 3.23

3733 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3733 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

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OP600C
TT Electronics

1 : USD 3.2315
100 : USD 3.1165
400 : USD 3.105

     
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RoHS - XON
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NPN Silicon Phototransistor OP600 Series Features: Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range PC Board Mounting Mechanically and spectrally matched to OP123 and OP223 LEDs TX and TXV processing available (see Hi-Rel section) Description: Each device in this series is a NPN silicon phototransistor in a hermetically sealed pill package. The narrow receiving angle provides excellent on-axis coupling The OP600 series devices are 100% production tested using infrared light for close correlation with OPTEK GaAs and GaAIAs emitters. Components in the OP600 series are mechanically and spectrally matched to the OP123 and OP233 series TX and TXV components are available. For more information, please contact your local representative or OPTEK. Please refer to Application Bulletins 208 and 210 for additional information and reliability (degradation) data, and to Application Bulletin 202 for pill -type soldering to PC Board. Applications: Non-contact reflective object sensor Machine safety Assembly line automation End of travel sensor 1 Machine automation Door sensor Pin Sensor 1 Collector/ Ordering Information 2 Emitter/Anode Light Current Input Power Part I (mA) Viewing C(ON) 2 E (mW/cm ) E Number Sensor Min / Max Angle 2 OP600A 1.20 / NA OP600B 0.60 / 1.80 2.5 OP600C Transistor 0.30 / NA 35 OP643SL 4.00 / 8.00 20.0 OP644SL 7.00 / 22.00 DIMENSIONS ARE IN: Millimeters Inches RoHS DO NOT LOOK DIRECTLY AT LED WITH UNSHIELDED EYES OR DAMAGE TO RETINA MAY OCCUR. General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev C 11/2019 Page 1 TT electronics plc Form 500-1080-001 Rev - 06/2019 NPN Silicon Phototransistor OP600 Series Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Collector-Emitter Voltage 25 V Emitter -Collector Voltage 5 V Storage Temperature Range -65 C to +150 C Operating Temperature Range -65 C to +125 C (1)(2) Soldering Temperature (5 seconds with soldering iron) 260 C (3) Power Dissipation 50 mW Continuous Collector Current 50 mA Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS On-State Collector Current OP600A 1.2 - 1.8 2(5) V = 5 V, E = 2.5 mW/cm CE E OP600B 0.6 - 1.8 (4) I mA C(ON) OP600C 0.3 - 1.8 OP643SL 4.0 - 8.0 2(5) V = 5 V, E = 20 mW/cm CE E OP644SL 7.0 - 22.0 I Collector-Dark Current - - - nA V = 10 V, E = 0 CEO CE E V Collector-Emitter Breakdown Voltage 25 - - V I = 100 A (BR)CEO C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E Collector-Emitter (4) (2)(7) 2(5) V OP600 (A, B, C) - - 0.4 V I = 0.15 mA, E = 2.5 mW/cm CE(SAT) C E (2)(7) 2(5) OP643-644 (SL) I = 0.4 mA, E = 20 mW/cm C E V = 5 V, I = 0.80 mA, cc C t Rise Time - 15 - s r R = 1 k, See Test Circuit L V = 5 V, I = 0.80 mA, cc C t Fall Time - 15 - s f R = 1 k, See Test Circuit L Notes: (1) Refer to Application Bulleting 202, which discusses proper techniques for soldering pill -type devices to PCBoards. (2) No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (3) Derate linearly 0.5 mW/ C above 25 C. (4) Junction temperature maintained at 25 C. 2 (5) For OP600A, OP600B and OP600C, light source is a GaAIAs LED, peak wavelength = 890 nm, that provides irradiance of 2.5 mW/cm . The source irradiance is not necessarily uniform over the entire lens area of the unit being tested. (6) For OP643SL and OP644SL, light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared source. General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev C 11/2019 Page 2 TT electronics plc Form 500-1080-001 Rev - 06/2019

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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