SS8550W TWGMC

SS8550W electronic component of TWGMC
SS8550W TWGMC
SS8550W Bipolar Transistors - BJT
SS8550W  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SS8550W Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SS8550W Bipolar Transistors - BJT are a product manufactured by TWGMC. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. SS8550W
Manufacturer: TWGMC
Category: Bipolar Transistors - BJT
Description: SOT-323 Bipolar Transistors - BJT ROHS
Datasheet: SS8550W Datasheet (PDF)
Price (USD)
20: USD 0.0326 ea
Line Total: USD 0.65 
Availability : 24269
  
Ship by Fri. 21 Nov to Thu. 27 Nov
QtyUnit Price
20$ 0.0326
200$ 0.0252
600$ 0.0214
3000$ 0.0124
9000$ 0.0111
21000$ 0.0104

Availability 24269
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0326
200$ 0.0252
600$ 0.0214
3000$ 0.0124
9000$ 0.0111
21000$ 0.0104

   
Manufacturer
Product Category
Package
Rohs
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We are delighted to provide the SS8550W from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SS8550W and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The SS8550W with SOT-323 Bipolar Transistor (BJT) ROHS manufactured by TWGMC is a three-terminal NPN-type transistor designed for small signal general-purpose applications. The device is operated in the active region and provides high-current gain. It has an average current gain of hFE = 100, Typical DC Current Gain (hFE) = 40 – 120. It has a maximum collector current rating of 200mA, collector-emitter voltage rating of 40V. It also features high voltage gain, resulting in a maximum transition frequency fT of 300MHz. The low collector-emitter saturation voltage (VCE(sat)) is 0.2V typical at IC = 10mA. The device has a low spread in DC current gain (hFE) and has excellent hFE linearity. It has a collector-base breakdown voltage rating of 80V and an emitter-base breakdown voltage rating of 5V. This device is RoHS compliant and is packaged in SOT-323 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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