Product Information

4N90L-TF1-T

4N90L-TF1-T electronic component of Unisonic

Datasheet
MOSFET N Trench 900V 4A (Tc) 5V @ 250uA 4.2 Ω @ 2A,10V TO-220F1 RoHS

Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9922 ea
Line Total: USD 0.99

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

4N90L-TF1-T
Unisonic

1 : USD 0.9922
10 : USD 0.8213
30 : USD 0.7009
100 : USD 0.6003
500 : USD 0.5828
1000 : USD 0.5727

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The 4N90L-TF1-T is an N-channel MOSFET manufactured by Unisonic Technologies. It has a trench architecture, a 900V drain-source voltage rating, and a 4A maximum continuous drain-source current rating. Its threshold voltage is 5V, its gate-source leakage current is 250uA, its on-resistance is 4.2Ω @ 2A, and its off-state drain-source voltage is 10V. It has a TO-220F1 package, and is compliant with RoHS standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Unisonic Tech
UTC(Unisonic Tech)

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