Product Information

TF2123G-E3-AQ3-R

TF2123G-E3-AQ3-R electronic component of Unisonic

Datasheet
Junction Field-Effect Transistor，JFET SOT-723 RoHS
Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0207 ea
Line Total: USD 0.41

7469 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
19 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 20
Multiples : 20
20 : USD 0.0251
200 : USD 0.0198
600 : USD 0.0169
2000 : USD 0.0151
8000 : USD 0.0135
16000 : USD 0.0127

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Continuous Drain Current Id @ 25°C
Power Dissipation-Max Ta
Total Device Dissipation Pd
Drain Current Idss@Vds Vgs 0
Input Capacitance Ciss@Vds
Static Drain-Source On Resistance Rdson
Gate-Source Breakdown Voltage Vbrgss
Gate-Source Cutoff Voltage Vgsoff@Id
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Additional Infomation About Product

The TF2123G-E3-AQ3-R is a Junction Field-Effect Transistor (JFET) in SOT-723 package manufactured by Unisonic Technologies. This JFET is RoHS compliant and features an operating temperature range of -55°C to 150°C. It has an off-state drain to source voltage (Vds(off)) of 15V and a maximum drain current (Id) of 25mA. It has a gate source voltage (Vgs) of 4V and a maximum power dissipation (Pd) of 350mW. This device is suitable for applications such as signal switching, voltage regulation, and low-noise analog signal amplification.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic may also be referenced as

Unisonic Tech
UTC(Unisonic Tech)

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