Product Information

UF3C065030B3

UF3C065030B3 electronic component of UnitedSiC

Datasheet
MOSFET 650V/30mOhm, SiC, FAST CASCODE, G3, D2PAK-3L
Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 21.3058 ea
Line Total: USD 21.31

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

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UF3C065030B3
UnitedSiC

1 : USD 21.3058
10 : USD 19.5748
25 : USD 18.7628

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

650V-27mW SiC Cascode Rev. A, March 2019 DATASHEET Description United Silicon Carbide s cascode products co-package its high- UF3C065030B3 performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard TAB gate drive. D (2) Features TAB w Typical on-resistance R of 27mW DS(on),typ w Maximum operating temperature of 175C w Excellent reverse recovery G (1) w Low gate charge 2 w Low intrinsic capacitance 3 1 w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible S (3) . under typical operating conditions) Typical applications w EV charging Part Number Package Marking w PV inverters 2 D PAK-3L UF3C065030B3 UF3C065030B3 w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065030B3 Rev. A, March 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 650 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 65 A C 1 I Continuous drain current D T = 100C 47 A C 2 T = 25C Pulsed drain current I 230 A C DM 3 L=15mH, I =4A E 120 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 242 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.48 0.62 C/W qJC Datasheet: UF3C065030B3 Rev. A, March 2019 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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