Product Information

UF3C065040B3

UF3C065040B3 electronic component of UnitedSiC

Datasheet
MOSFET 650V/40mOhm, SiC, FAST CASCODE, G3, D2PAK-3L
Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 15.1998 ea
Line Total: USD 15.2

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

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UF3C065040B3
UnitedSiC

1 : USD 15.1998
10 : USD 13.4113

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Configuration
Series
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Additional Infomation About Product

650V-42mW SiC FET Rev. B, December 2019 DATASHEET Description This SiC FET device is based on a unique cascode circuit UF3C065040B3 configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction 2 devices. Available in the D PAK-3L package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with TAB recommended RC-snubbers, and any application requiring standard D (2) gate drive. TAB Features w Typical on-resistance R of 42mW DS(on),typ G (1) w Maximum operating temperature of 175C 2 w Excellent reverse recovery 3 w Low gate charge 1 w Low intrinsic capacitance w ESD protected, HBM class 2 S (3) w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Typical applications Part Number Package Marking 2 w EV charging D PAK-3L UF3C065040B3 UF3C065040B3 w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065040B3 Rev. B, December 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 650 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 41 A C 1 I Continuous drain current D T = 100C 30 A C 2 T = 25C Pulsed drain current I 125 A C DM 3 L=15mH, I =3.19A E 76 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 176 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Reflow soldering temperature T reflow MSL 1 260 C solder 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max R Thermal resistance, junction-to-case 0.65 0.85 C/W qJC Datasheet: UF3C065040B3 Rev. B, December 2019 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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