1200V-80mW SiC Cascode Rev. A, January 2019 DATASHEET Description United Silicon Carbide s cascode products co-package its high- UF3C120080K4S performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247- package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. CASE CASE Features D (1) w Typical on-resistance R of 80mW DS(on),typ w Maximum operating temperature of 175C w Excellent reverse recovery G (4) w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 KS (3) w TO-247-4L package for faster switching, clean gate waveforms S (2) 1 2 3 4 Typical applications w EV charging Part Number Package Marking w PV inverters UF3C120080K4S TO-247-4L UF3C120080K4S w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C120080K4S Rev. A, January 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 1200 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 33 A C 1 I Continuous drain current D T = 100C 24 A C 2 T = 25C Pulsed drain current I 77 A C DM 3 L=15mH, I =2.8A E 58.5 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 254.2 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.45 0.59 C/W qJC Datasheet: UF3C120080K4S Rev. A, January 2019 2