xR SiC Series 5A - 1200V SiC Schottky Diode UJ2D1205T . Datasheet . Description CASE United Silicon Carbide, Inc. offers the xR series of high performance SiC CASE Schottky diodes. With zero reverse recovery charge and 175C maximum junction temperature, USCis diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 1 2 1 2 Part Number Package Marking UJ2D1205T TO-220-2L UJ2D1205T Features Typical Applications Positive temperature coefficient for safe operation and ease of w w Power converters paralleling w Industrial motor drives w w 175C maximum operating junction temperature Switching-mode power supplies w w Extremely fast switching not dependent on temperature Power factor correction modules Essentially no reverse or forward recovery w w RoHS compliant Maximum Ratings Parameter Symbol Test Conditions Value Units DC blocking voltage V 1200 V R Repetitive peak reverse voltage, T =25C j V 1200 V RRM Surge peak reverse voltage V 1200 V RSM Maximum DC forward current I T = 151C 5 A F C T = 25C, t = 10ms 37.5 C p Non-repetitive forward surge current I A FSM sine halfwave T = 110C, t =10ms 30 C p T = 25C, t = 10ms 21.3 Repetitive forward surge current C p I A FRM sine halfwave, D=0.1 T = 110C, t =10ms 13 C p T = 25C, L = 10mH, j Non-repetitive avalanche energy E 44 mJ AS Ipk=2.9A, V =100V DD T = 25C 93 C Power dissipation P W Tot T = 151C 15 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only 1.6mm from case for T 260 C sold allowed at leads 10s Rev. B, October 2016 1 For more information go to www.unitedsic.com. xR SiC Series 5A - 1200V SiC Schottky Diode UJ2D1205T . Datasheet . Electrical Characteristics T = +25C unless otherwise specified J Value Parameter Symbol Test Conditions Units Min Typ Max I = 5A, T = 25C - 1.5 1.7 F J V Forward voltage V F I = 5A, T =175C - 2.5 3 F J V =1200V, T =25C - 30 190 R j I Reverse current mA R V =1200V, T =175C - 60 600 R J (1) V =800V Q 26 nC Total capacitive charge R C V =1V, f=1MHz 260 R Total capacitance C V =400V, f=1MHz pF 24 R V =800V, f=1MHz 19 R Capacitance stored energy E V =800V 6.8 mJ C R (1) See Figure 8, Q is independent on T , di /dt, and I as shown in the application note USCi AN0011. c j F F Thermal characteristics Value Parameter symbol Test Conditions Units Min Typ Max Thermal resistance R 1.19 1.6 C/W qJC Typical Performance -4 1.E-04 10 10 9 -5 1.E-05 8 10 7 -6 1.E10-06 6 5 -7 - 55C 10 1.E-07 4 25C - 55C 3 100C -8 25C 10 1.E-08 2 150C 175C 1 175C -9 10 1.E-09 0 500 600 700 800 900 1000 1100 1200 0 1 2 3 4 5 Reverse Voltage, V (V) Forward Voltage, V (V) R F Figure 1 Typical reverse characteristics Figure 2 Typical forward characteristics Rev. B, October 2016 2 For more information go to www.unitedsic.com. Reverse Current, I (A) R Forward Current, I (A) F