Product Information

UJC06505K

UJC06505K electronic component of UnitedSiC

Datasheet
MOSFET 650V/45mOhm SiC CASCODE, G2, TO-247

Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

UJC06505K
UnitedSiC

1 : USD 23.9432
5 : USD 22.869
10 : USD 22.1552
25 : USD 20.5249
50 : USD 20.5249
100 : USD 19.862
250 : USD 18.7411
500 : USD 18.476
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

UJC06505K
UnitedSiC

1 : USD 16.3809
3 : USD 14.9103
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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UJC06505K is a high-voltage, low-loss SiC MOSFET from UnitedSiC. It is a 650V, 20A dual N-channel device with a maximum on-state resistance of 4.9 mOhm. The device has a low gate charge of 8.8nC and a fast switching speed of 166ns, making it suitable for high-frequency applications such as power supplies, motor drives, and home appliances. It has a built-in gate protection circuit, an integrated package temperature monitor, and a built-in dynamic temperature rise control to reduce temperature rise. The package is EPC20E6, a low-profile and thermally-efficient package suitable for high power applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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