Si2338DS-T1-GE3 VBsemi Elec

Name: Si2338DS-T1-GE3
Brand: VBsemi Elec
SKU: Si2338DST1GE3_VBsemi_Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

Si2338DS-T1-GE3 electronic component of VBsemi Elec

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of Si2338DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si2338DS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	Si2338DS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	30V 6.5A 1.7W 30mO@10V,3.2A N Channel SOT-23 MOSFETs ROHS
Datasheet:	Si2338DS-T1-GE3 Datasheet (PDF)

Price (USD)

5: USD 0.0873 ea
Line Total: USD 0.44

Availability : 0

Qty	Unit Price
5	$ 0.0873
50	$ 0.0854
150	$ 0.084
500	$ 0.0619

Si2338DS-T1-GE3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 5
Multiples : 5

Qty	Unit Price
5	$ 0.0873
50	$ 0.0854
150	$ 0.084
500	$ 0.0619

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SOT23 - 3 SOT23 - 3
Brand Category Vbsemi Elec Vbsemi Elec
Drain Source Voltage Vdss 30 V 30 V
Continuous Drain Current Id 6.5 A 6.5 A
Power Dissipation Pd 1.7 W 1.7 W
Drain Source On Resistance Rdson@Vgs Id 30 mOhms @10V , 3.2A 30 mOhms @10V , 3.2A
Gate Threshold Voltage Vgsth@Id 2 V @250uA 2 V @250uA
Type N Channel N Channel

Si2338DS-T1-GE3 Alternative Parts

Image	Part-Description
Hot	SI2338DS-T1-GE3 Vishay N-Channel 30 V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236) Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges. Stock: 3000

We are delighted to provide the Si2338DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si2338DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Si2338DS-T1-GE3 is a 30V 6.5A 1.7W 30mO@10V,3.2A N Channel SOT-23 MOSFET manufactured by VBsemi Elec (VBE). It is a metal-oxide-semiconductor field effect transistor designed for surface mount technology and is RoHS compliant. It features a drain-source voltage rating of 30V and a drain current rating of 6.5A, making it suitable for many applications such as high-frequency switching, motor controls, and consumer electronics. The on-state resistance is 30 mO@10V and 3.2A. This product is also UL approved and meets the requirements of the Restrictions of Hazardous Substances (RoHS) Directive.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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