Product Information

VBE1202

VBE1202 electronic component of VBsemi Elec

Datasheet
20V 120A 2mO@10V,120A N Channel TO-252 MOSFETs ROHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.814 ea
Line Total: USD 0.81

49 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
49 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

VBE1202
VBsemi Elec

1 : USD 0.7455
10 : USD 0.6192
30 : USD 0.5562
100 : USD 0.4932
500 : USD 0.3984
1000 : USD 0.3787

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Additional Infomation About Product

The VBE1202 with 20V 120A 2mO@10V,120A N Channel TO-252 MOSFET is an integrated 20V, 120A N-Channel Power MOSFET manufactured by VBsemi Elec. This device has very low on-resistance of 2 milli-ohm and an RDS (on) of 10V,120A, making it perfect for very low-voltage high-current applications. It also features Automatic Level Shifting (ALS), a patented circuit which automatically shifts gate voltage during switching events, for superior MOSFET performance. The TO-252 package of this MOSFET allows easy assembly and conforms to the ROHS standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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