Product Information

VBMB2102M

VBMB2102M electronic component of VBsemi Elec

Datasheet
MOSFET P Channel 100V 12A 2.5V @ 250uA TO220F RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9194 ea
Line Total: USD 0.92

48 - Global Stock
Ships to you between
Thu. 09 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - Global Stock


Ships to you between
Thu. 09 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

VBMB2102M
VBsemi Elec

1 : USD 0.8445
10 : USD 0.6984
50 : USD 0.6274
100 : USD 0.5564
500 : USD 0.513
1000 : USD 0.4913

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The VBMB2102M is an MOSFET P Channel, designed for switching applications, with a 100V drain source voltage 12A peak drain current and a maximum gate controlled drain current of 2.5V @ 250µA. It comes in a standard TO220F RoHS package with a low and flat body. The part is manufactured by VBsemi Elec, a leader in advanced power electronics solutions. The low gate charge and Miller Ratio of this part make it well suited for high frequency switching applications in end equipment.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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