Product Information

VBP15R50S

VBP15R50S electronic component of VBsemi Elec

Datasheet
MOSFET Super-247 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5527 ea
Line Total: USD 2.55

4 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

VBP15R50S
VBsemi Elec

1 : USD 2.5527
10 : USD 2.4955
30 : USD 2.4579
90 : USD 2.4205

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Additional Infomation About Product

.The VBP15R50S with MOSFET Super-247 RoHS is a type of field-effect transistor (FET) that is manufactured by VBsemi Elec. It is designed for power applications and features a wide range voltage and excellent efficiency. The device is RoHS compliant, meaning that it does not contain any hazardous materials and is safe for use in a wide range of electronic products. It offers a high current rating of 15A and can operate at a maximum Drain-Source Voltage of 50V. This makes it suitable for high-current drive applications, such as motor controls, lamp dimming, and industrial automation. The device also includes an oxide-based dielectric layer, which provides superior switching speed and reliability. The device also offers on-duty cycle protection to prevent device degradation due to excessive on-time.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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