Product Information

VBQA1302

VBQA1302 electronic component of VBsemi Elec

Datasheet
MOSFET N Trench 30V 100A 2.5V @ 250uA 2.5 mΩ @ 29A,4.5V DFN-8 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.235 ea
Line Total: USD 1.24

4 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

VBQA1302
VBsemi Elec

1 : USD 1.235
10 : USD 1.0515
30 : USD 0.9509
100 : USD 0.8365
500 : USD 0.6866
1000 : USD 0.6649

Read More Specifications

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The VBQA1302 is a surface-mount MOSFET N Trench 30V 100A 2.5V @ 250uA 2.5 mΩ @ 29A,4.5V DFN-8 RoHS manufactured by VBsemi Elec. This part is a cost-effective, high-power complementary FET offering high-efficiency performance in low voltage applications. It has an extremely low on-resistance of 2.5mΩ @ 29A, and its low gate charge makes it suitable for a range of applications. This part's low gate charge also helps reduce switching losses. In addition, its high current rating and unique features make it a desirable choice for various high-power applications. Furthermore, this part is in compliance with RoHS standards, making it suitable for commercial as well as industrial applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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