JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400AH N-Channel Enhancement Mode Field Effect Transistor I V R MAX D (BR)DSS DS(on) SOT-23-3L 10 V 27m V 32m 4.5V 3 0 5.8 A 48m 2.5V 1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION z High dense cell design for extremely low R DS(ON) z Load/Power Switching z Exceptional on-resistance and maximum DC current capability z Interfacing Switching Equivalent Circuit MARKING .R0H Solid dot = Green molding compound device, if none,the normal device. Maximum ratings ( T =25 unless otherwise noted) a Symbol Unit Parameter Value Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 5.8 A D Drain Current-Pulsed (note 1) I 30 A DM Power Dissipation P 450 mW D Thermal Resistance from Junction to Ambient (note 2) R 313 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG 1 Rev. - 1.0 www.jscj-elec.com MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 A Gate-source leakage current IGSS VGS =12V, VDS = 0V 100 nA On characteristics (note 3) VGS =10V, ID =5.8A 19 27 m Drain-source on-resistance 20 32 RDS(on) VGS =4.5V, ID =5A m (note 3) VGS =2.5V,ID=4A m 25 48 Forward tranconductance gFS VDS =5V, ID =5A 8 S Gate threshold voltage VGS(th) VDS =V , ID =250A 0.7 1.4 V GS Dynamic Characteristics (note 4,5) Input capacitance Ciss 1155 pF Output capacitance Coss VDS =15V,VGS =0V,f =1MHz 108 pF Reverse transfer capacitance Crss 84 pF Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 3.6 Switching Characteristics (note 4,5) Turn-on delay time td(on) 5 ns Turn-on rise time tr 7 ns V =10V,V =15V, GS DS R =2.7,R =3 Turn-off delay time td(off) L GEN 40 ns Turn-off fall time tf 6 ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) V I =1A,V =0V 1 V SD S GS Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. 2 Rev. - 1.0 www.jscj-elec.com