X-On Electronics has gained recognition as a prominent supplier of VBZE50P03 MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBZE50P03 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBZE50P03 VBsemi Elec

Name: VBZE50P03
Brand: VBsemi Elec
SKU: VBZE50P03_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

VBZE50P03 electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBZE50P03
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET P Trench 30V 50A 3V @ 250uA 16 mÎ© @ 20A,4.5V TO-252 RoHS
Datasheet:	VBZE50P03 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6022 ea
Line Total: USD 0.6

Availability - 12
Ship by Tue. 01 Jul to Fri. 04 Jul

MOQ: 1 Multiples: 1
Pack Size: 1

VBZE50P03 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

12

Ship by Tue. 01 Jul to Fri. 04 Jul

MOQ : 1
Multiples : 1

1 : USD 0.6022
10 : USD 0.5878
30 : USD 0.5792
100 : USD 0.3852

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Brand

Vbsemi Elec Vbsemi Elec

Rohs

Y Y

Package

TO - 252 TO - 252

Fet Type

P Channel P Channel

Drain To Source Voltagevdss

30 V 30 V

Continuous Drain Current Id @ 25°C

50 A 50 A

Vgsth Max @ Id

3V @ 250uA 3V @ 250uA

Rds On Max @ Id Vgs

16mO @ 20A,4.5V 16mO @ 20A,4.5V

Power Dissipation-Max Ta 25°C

127 W 127 W

Drain Source Voltage Vdss

30 V 30 V

Continuous Drain Current Id

50 A 50 A

Power Dissipation Pd

127 W 127 W

Drain Source On Resistance Rdson@Vgs Id

16 mOhms @4.5V , 20A 16 mOhms @4.5V , 20A

Gate Threshold Voltage Vgsth@Id

3 V @250uA 3 V @250uA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

VBZE50P03 Alternative Parts

We are delighted to provide the VBZE50P03 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBZE50P03 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBZE50P03 is an N-channel Trench-structure MOSFET manufactured by Vbsemi Elec. It is ideal for switching and load regulation of high-power, high-efficiency applications. It has been optimized for use in applications requiring wide range of operating voltages, high power, and low conduction losses, while still providing low gate charge. This MOSFET is able to deliver up to 50A of continuous current at a maximum voltage of 30V with a gate threshold voltage of 3V at 250uA. Its internal resistance (Rdson) is only 4.5V @ 20A, and is packaged in a ROHS-compliant TO-252 package for easy surface mounting.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
12 Ship by Tue. 01 Jul to Fri. 04 Jul MOQ : 1 Multiples : 1	1 : USD 0.6022 10 : USD 0.5878 30 : USD 0.5792 100 : USD 0.3852

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