1N4151W-E3-08

1N4151W www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance click logo to get started DESIGN SUPPORT TOOLS please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS 1N4151W-E3-08 or 1N4151W-E3-18 1N4151W Single A5 Tape and reel 1N4151W-HE3-08 or 1N4151W-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 50 V R Repetitive peak reverse voltage V 75 V RRM Average rectified current half wave f 50 Hz I 150 mA (1) F(AV) rectification with resistive load Surge current t < 1 s and T = 25 C I 500 mA j FSM (1) Power dissipation P 410 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 450 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.5, 23-Feb-18 Document Number: 85721 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N4151W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1.0 V F F V = 50 V I 50 nA R R Leakage current V = 20 V, T = 150 C I 50 A R j R Reverse breakdown voltage I = 5 A (pulsed) V 75 V R (BR) Diode capacitance V = V = 0 V C 2pF F R D I = 10 mA, I = 10 mA F R t 4ns rr i = 1 mA R Reverse recovery time I = 10 mA, i = 1 mA F R t 2ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 T =100C 100 j 800 600 10 25C 400 1 0.1 200 0 0.01 0 20 40 60 80 100 120 140 160180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 18743 T - Ambient Temperature (C) 18742 V - Forward Voltage (V) amb F Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 10000 T =25C j 1.1 T =25C j f=1kHz f=1MHz 1000 1.0 100 0.9 0.8 10 0.7 1 0 2468 10 0.01 0.1 110 100 I - Forward Current (mA) 18662 V - Reverse Voltage (V) F 18664 R Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.5, 23-Feb-18 Document Number: 85721 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 r - Dynamic Forward Resistance() f I - Forward Current (mA) F P - Admissible Power Dissipation (mW) C (V )/C (0 V) - Relative Capacitance (pF) tot D R D