X-On Electronics has gained recognition as a prominent supplier of 1N4448TR Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N4448TR Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N4448TR Vishay

1N4448TR electronic component of Vishay
1N4448TR Vishay
1N4448TR Diodes - General Purpose, Power, Switching
1N4448TR  Semiconductors

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Part No. 1N4448TR
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Vr/75V Io/150mA T/R
Datasheet: 1N4448TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1097 ea
Line Total: USD 0.11 
Availability - 273327
Ship by Fri. 09 May to Tue. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58200
Ship by Tue. 13 May to Mon. 19 May
MOQ : 50000
Multiples : 50000
50000 : USD 0.0151

41951
Ship by Tue. 13 May to Mon. 19 May
MOQ : 607
Multiples : 1
607 : USD 0.4421
5682 : USD 0.0472
5731 : USD 0.0469
5797 : USD 0.0463
5848 : USD 0.0459
9091 : USD 0.0295
9174 : USD 0.0293
9302 : USD 0.0289
9390 : USD 0.0286
15000 : USD 0.0272
30000 : USD 0.0268

4617
Ship by Tue. 20 May to Fri. 23 May
MOQ : 20
Multiples : 20
20 : USD 0.0585
200 : USD 0.0465
600 : USD 0.0296
2000 : USD 0.024
10000 : USD 0.0216
20000 : USD 0.0203

273327
Ship by Fri. 09 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 0.1097
10 : USD 0.0348
100 : USD 0.0323
500 : USD 0.0285
1000 : USD 0.0261
2500 : USD 0.0239
5000 : USD 0.0205
10000 : USD 0.0182
25000 : USD 0.0147
50000 : USD 0.0147

25562
Ship by Fri. 09 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 0.1446
10 : USD 0.0665
500 : USD 0.0477
747 : USD 0.026
2054 : USD 0.0246

   
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Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
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Cnhts
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We are delighted to provide the 1N4448TR from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4448TR and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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333 3 1N4448 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diodes Material categorization: for definitions of compliance please se e www.vishay.com/doc 99912 APPLICATIONS Extreme fast switches ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N4448 1N4448TAP or 1N4448TR V4448 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM Reverse voltage V 75 V R Peak forward surge current t = 1 s I 2A p FSM Repetitive peak forward current I 500 mA FRM Forward continuous current I 300 mA F Average forward current V = 0 I 150 mA R F(AV) l = 4 mm, T = 45 C P 440 mW L tot Power dissipation l = 4 mm, T 25 C P 500 mW L tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 175 C j Storage temperature range T -65 to +150 C stg Rev. 1.4, 24-Feb-2020 Document Number: 81858 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D 1N4448 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 5 mA V 0.620 0.720 V F F Forward voltage I = 100 mA V 1V F F V = 20 V I 25 nA R R Reverse current V = 20 V, T = 150 C I 50 A R j R V = 75 V I 5A R R I = 100 A, t /T = 0.01, R p Breakdown voltage V 100 V (BR) t = 0.3 ms p Diode capacitance V = 0, f = 1 MHz, V = 50 mV C 4pF R HF D Rectification efficiency V = 2 V, f = 100 MHz r45 % HF I = I = 10 mA, i = 1 mA t 8ns F R R rr Reverse recovery time I = 10 mA, V = 6 V, F R t 4ns rr i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.2 1.0 I = 100 mA F T = 25 C j 100 0.8 10 mA 0.6 1m A Scattering Limit 10 0.4 0.1 mA 0.2 1 0 - 30 0 30 60 90 120 1 100 10 94 9098 V - Reverse Voltage (V) 94 9169 T - Junction Temperature (C) R j Fig. 1 - Forward Voltage vs. Junction Temperature Fig. 3 - Reverse Current vs. Reverse Voltage 1000 1N4448 100 Scattering Limit 10 1 T = 25 C j 0.1 2.0 0 0.4 0.8 1.2 1.6 94 9171 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.4, 24-Feb-2020 Document Number: 81858 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) V- Forward Voltage (V) F F I - Reverse Current (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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