X-On Electronics has gained recognition as a prominent supplier of 1N5625-TAP Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N5625-TAP Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

1N5625-TAP Vishay

1N5625-TAP electronic component of Vishay
1N5625-TAP Vishay
1N5625-TAP Rectifiers
1N5625-TAP  Semiconductors

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See Product Specifications
Part No. 1N5625-TAP
Manufacturer: Vishay
Category: Rectifiers
Description: Rectifiers 3.0 Amp 400 Volt
Datasheet: 1N5625-TAP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
690: USD 0.377 ea
Line Total: USD 260.13 
Availability - 18950
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ: 690  Multiples: 1
Pack Size: 1
Availability Price Quantity
18950
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 690
Multiples : 1
690 : USD 0.377
695 : USD 0.3744
697 : USD 0.3731
702 : USD 0.3705
707 : USD 0.3679
710 : USD 0.3666
1000 : USD 0.364
3000 : USD 0.3475
6000 : USD 0.3462
15000 : USD 0.3437

20869
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 0.7675
10 : USD 0.5262
100 : USD 0.4455
250 : USD 0.4444
500 : USD 0.4125
1000 : USD 0.4125
2500 : USD 0.396
12500 : USD 0.396

18950
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 695
Multiples : 1
695 : USD 0.3744

8245
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 412
Multiples : 1
412 : USD 0.6325
1000 : USD 0.5614

7275
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 7500
Multiples : 7500
7500 : USD 0.4292

   
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RoHS - XON
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Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the 1N5625-TAP from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5625-TAP and other electronic components in the Rectifiers category and beyond.

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1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading 949588 Material categorization: For definitions of compliance please see MECHANICAL DATA www.vishay.com/doc 99912 Case: SOD-64 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Rectification diode, general purpose Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY 1N5627 1N5627-TR 2500 per 10 tape and reel 12 500 1N5627 1N5627-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE 1N5624 V = 200 V I = 3 A SOD-64 R F(AV) 1N5625 V = 400 V I = 3 A SOD-64 R F(AV) 1N5626 V = 600 V I = 3 A SOD-64 R F(AV) 1N5627 V = 800 V I = 3 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT 1N5624 V = V 200 V R RRM 1N5625 V = V 400 V Reverse voltage = repetitive peak reverse R RRM See electrical characteristics voltage 1N5626 V = V 600 V R RRM 1N5627 V = V 800 V R RRM Peak forward surge current t = 10 ms, half sinewave I 100 A p FSM Repetitive peak forward current I 18 A FRM Average forward current I 3A F(AV) t = 20 s, half sine wave, p Pulse avalanche peak power P 1000 W R T = 175 C j Pulse energy in avalanche mode, non repetitive I = 1 A, T = 175 C E 20 mJ (BR)R j R (inductive load switch off) 2 2 2 i *t-rating i *t 40 A *s Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT l = 10 mm, T = constant R 25 K/W L thJA Junction ambient On PC board with spacing 25 mm R 70 K/W thJA Rev. 1.6, 05-Sep-13 Document Number: 86063 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 3 A V -- 1 V F F V = V I -0.1 1 A R RRM R Reverse current V = V , T = 100 C I - 5 10 A R RRM j R I = 100 A, t /T = 0.01, R p Breakdown voltage V - - 1600 V (BR) t = 0.3 ms p Diode capacitance V = 4 V, f = 1 MHz C -40 60 pF R D I = 0.5 A, I = 1 A, i = 0.25 A t -3.5 5 s F R R rr Reverse recovery time I = 1 A, dI/d = 5 A/s, V = 50 V t -4.5 7.5 s F t R rr Reverse recovery charge I = 1 A, dI/d = 5 A/s Q -8 12 C F t rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 40 3.5 V = V R RRM 3.0 half sinewave R = 25 K/W thJA 30 l = 10 mm 2.5 2.0 20 ll 1.5 1.0 10 R = 70 K/W thJA 0.5 PCB: d = 25 mm T = constant L 0.0 0 30 0 5 10 15 20 25 04200 60 80 100 120 140 160 180 16393 T - Ambient Temperature (C) 94 9563 I - Lead Length (mm) amb Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100.000 V = V R RRM 10.000 100 T =175C j 1.000 0.100 T =25C j 10 0.010 0.001 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 50 75 100 125 150 175 16392 V Forward Voltage ( V ) 16394 T Junction Temperature ( C ) F j Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature Rev. 1.6, 05-Sep-13 Document Number: 86063 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R - Therm. Resist. thJA I Forward Current ( A) F Junction/Ambient (K/W) I R everse Current ( A ) I - Average Forward Current (A) FAV R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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