2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Military Qualified V (V) 90 DS Low On-Resistence: 3.6 R ( ) at V = 10 V 4 DS(on) GS Low Threshold: 1.6 V Configuration Single Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns TO-205AD Low Input and Output Leakage (TO-39) BENEFITS Guaranteed Reliability Low Offset Voltage S Low-Voltage Operation 1 Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS 2 3 Hi-Rel Systems G D Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Top View Memories, Transistors, etc. Battery Operated Systems Solid-State Relays ORDERING INFORMATION DESCRIPTION/DSCC VISHAY ORDERING PART PACKAGE PART NUMBER PART NUMBER Commercial 2N6661 2N6661 Commercial, Lead (Pb)-free 2N6661-E3 www.vishay.com/doc 67884 2N6661-2 See -2 Flow Document 2N6661-2 JANTX2N6661 (std Au leads) 2N6661JTX02 TO-205AD (TO-39) 2N6661JANTX JANTX2N6661 (with solder) 2N6661JTXL02 JANTX2N6661P (with PIND) 2N6661JTXP02 JANTXV2N6661 (std Au leads) 2N6661JTXV02 2N6661JANTXV JANTXV2N6661P (with PIND) 2N6661JTVP02 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 90 DS V V Gate-Source Voltage 20 GS T = 25 C 0.86 C Continuous Drain Current (T = 150 C) I J D T = 100 C 0.54 A C a I Pulsed Drain Current 3 DM T = 25 C 6.25 C P Maximum Power Dissipation W D T = 25 C 0.725 A b R Thermal Resistance, Junction-to-Ambient 170 thJA C/W Thermal Resistance, Junction-to-Case R 20 thJC Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg Notes a. Pulse width limited by maximum junction temperature. b. Not required by military spec. S11-1542-Rev. D, 01-Aug-11 Document Number: 70225 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A LIMITS b PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static V V = 0 V, I = 10 A Drain-Source Breakdown Voltage 90 125 - DS DS D V = V , I = 1 mA 0.8 1.6 2 DS GS D V Gate-Source Threshold Voltage V T = - 55 C -1.8 2.5 GS(th) A T = 125 C 0.3 1.3 - A V = 0 V - - 100 DS I V = 20 V Gate-Body Leakage nA GSS GS T = 125 C - - 500 A V = 72 V -- 1 DS Zero Gate Voltage Drain Current I V = 0 V A DSS GS T = 125 C - - 100 A b I V = 10 V V = 10 V -1.8 - mA On-State Drain Current D(on) GS DS V = 5 V I = 0.3 A -3.8 5.3 GS D b = 1 A R I -3.6 4 Drain-Source On-State Resistance DS(on) D V = 10 V GS d T = 125 C -6.7 7.5 A b g V = 7.5 V, I = 0.475 A Forward Transconductance 170 340 - mS fs DS D Diode Forward Voltage V V = 0 V I = 0.86 A 0.7 0.9 1.4 V SD GS S Dynamic C Input Capacitance -35 50 iss Output Capacitance C -15 40 oss V = 0 V V = 25 V, f = 1 MHz pF GS DS Reverse Transfer Capacitance C -2 10 rss C Drain-Source Capacitance -30- ds c Switching Turn-On Time t -6 10 ON V = 25 V, R = 23 DD L ns I 1 A, V = 10 V, R = 23 t D GEN g Turn-Off Time -8 10 OFF Notes a. FOR DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW 300 s duty cycle 2 %. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1542-Rev. D, 01-Aug-11 Document Number: 70225 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000