Doc No. TT4-EA-14636 Revision. 5 Product Standards MOS FET 2N7002E 2N7002E Silicon N-channel MOSFET Unit : mm For switching circuits 2.9 Panasonic parts No. FK360602 0.4 0.13 3 Features Low Drain-source On-state Resistance : RDS(on) typ = 1 (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 12 1.0 Marking Symbol : GV (0.95)(0.95) 1.9 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 C Panasonic NMini3-R1-B Parameter Symbol Rating Unit JEITA SC-59A Drain to Source Voltage VDS 60 V Code TO-236AA/SOT-23 Gate to Source Voltage VGS 20 V Drain Current ID 300 mA *1 IDp 600 mA Internal Connection Drain Current (Pulsed) *2 PD 350 mW Total Power Dissipation 3 Channel Temperature Tch 150 C Storage Temperature Range Tstg -55 to +150 C Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 C 2 *2 Mounted on FR4 board (25.4mm25.4mmt0.8mm,Cu area >300mm ) 1 2 Pin Name 1. Gate 2. Source 3. Drain 1 of 5 Page Established : 2013-04-19 Revised : 2013-10-10 1.4 2.4Doc No. TT4-EA-14636 Revision. 5 Product Standards MOS FET 2N7002E Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = 250 A, VGS = 0 V 60 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 A Gate-source Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A Gate-source Threshold Voltage Vth ID = 250 A, VDS = 10 V 1 3 V RDS(on)1 ID = 100 mA, VGS = 10 V 0.8 3 Drain-source On-state Resistance RDS(on)2 ID = 100 mA, VGS = 4.5 V 1 4 Input Capacitance Ciss 40 VDS = 10 V, VGS = 0 V Output Capacitance Coss 7 pF f = 1 MHz Reverse Transfer Capacitance Crss 4.5 Total Gate Charge Qg 0.8 VDS = 10 V, VGS = 0 to 4.5 V 0.2 nC Gate to Source Charge Qgs ID = 200 mA Gate to Drain Charge Qgd 0.4 Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2 of 5 Page Established : 2013-04-19 Revised : 2013-10-10