Product Information

2N7002E-T1-E3

2N7002E-T1-E3 electronic component of Vishay

Datasheet
60V 240mA 3O@10V,250mA 350mW N Channel SOT-23 MOSFETs ROHS
200 mA, 60 V, N-channel logic level MOSFET in SOT-23 package, suitable for switching applications.
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0911 ea
Line Total: USD 0.46

9394 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2063

4418 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5
Multiples : 1
5 : USD 0.6141
10 : USD 0.4472
100 : USD 0.2793
500 : USD 0.2654
1000 : USD 0.2506
5000 : USD 0.2268

5820 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0836
6000 : USD 0.0836
9000 : USD 0.0836
15000 : USD 0.0836
30000 : USD 0.0836

9394 - WHS 4


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 5
Multiples : 5
5 : USD 0.0911
50 : USD 0.0744
150 : USD 0.066
500 : USD 0.0597
3000 : USD 0.0525
6000 : USD 0.05

409500 - WHS 5


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.4474
10 : USD 0.3485
100 : USD 0.2162
1000 : USD 0.1598

2910 - WHS 6


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2021

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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Additional Infomation About Product

The 2N7002E-T1-E3 is a P-channel enhancement mode field-effect transistors (FETs) manufactured by Vishay. The device operates from -55°C to +150°C with a breakdown voltage of -20V.It is also RoHS-compliant. The 2N7002E-T1-E3 can handle up to 1A of continuous drain current at a drain-source voltage of -20V and offers an on-resistance (Rds) of just 0.66O, making it ideal for low power switching and low power analog circuits. Additionally, the 2N7002E-T1-E3 is designed with a low threshold voltage (2V) and an ultra-low capacitance (Ciss) of just 25pF, making it suitable for low-noise, high-speed applications. Applications include power management, LED lighting, and mobile device power switching.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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