2N7002PV,115 Nexperia

2N7002PV 60 V, 350 mA dual N-channel Trench MOSFET 23 November 2020 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS amb V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 350 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 500 mA pulsed t - 1 1.6 DSon GS D p resistance 300 s 0.01 T = 25 C j 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia 2N7002PV 60 V, 350 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source1 6 5 4 2 G1 gate1 3 D2 drain2 4 S2 source2 1 2 3 5 G2 gate2 G1 S1 S2 G2 SOT666 6 D1 drain1 017aaa254 6. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PV SOT666 plastic, surface-mounted package 6 leads 0.5 mm pitch 1.6 SOT666 mm x 1.2 mm x 0.55 mm body 7. Marking Table 4. Marking codes Type number Marking code ZF 2N7002PV 2N7002PV All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 23 November 2020 2 / 15