VS-60EPS..PbF Series, VS-60EPS..-M3 Series
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Vishay Semiconductors
High Voltage Input Rectifier Diode, 60 A
FEATURES
Very low forward voltage drop
Base
cathode
150 C max. operating junction temperature
Glass passivated pellet chip junction
2
Designed and qualified according to
2
JEDEC -JESD 47
3
Material categorization:
1
Available
for definitions of compliance please see
1 3
TO-247AC modied Cathode Anode
www.vishay.com/doc?99912
APPLICATIONS
Input rectification
PRODUCT SUMMARY
Vishay Semiconductors switches and output rectifiers
Package TO-247AC modified (2 pins)
which are available in identical package outlines
I 60 A
F(AV)
V 800 V to 1200 V
R DESCRIPTION
V at I 1.09 V
F F
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
I 1000 A
FSM
These devices are intended for use in main rectification
T max. 150 C
J
(single or three phase bridge).
Diode variation Single die
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Sinusoidal waveform 60 A
F(AV)
V 800/1200 V
RRM
I 1000 A
FSM
V 60 A, T = 25 C 1.09 V
F J
T -40 to +150 C
J
VOLTAGE RATINGS
V , MAXIMUM
RSM
V , MAXIMUM I
RRM RRM
NON-REPETITIVE PEAK REVERSE
PART NUMBER PEAK REVERSE VOLTAGE AT 150 C
VOLTAGE
V mA
V
VS-60EPS08PbF, VS-60EPS08-M3 800 900
1
VS-60EPS12PbF, VS-60EPS12-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average forward current I T = 118 C, 180 conduction half sine wave 60
F(AV) C
10 ms sine pulse, rated V applied 840 A
Maximum peak one cycle RRM
I
FSM
non-repetitive surge current
10 ms sine pulse, no voltage reapplied 1000
10 ms sine pulse, rated V applied 3530
RRM
2 2 2
Maximum I t for fusing I t A s
10 ms sine pulse, no voltage reapplied 4220
2 2 2
Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 42 200 A s
Revision: 12-Feb-16 Document Number: 94345
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS
30 A, T = 25 C 1.0 V
J
Maximum forward voltage drop V
FM
60 A, T = 25 C 1.09 V
J
Forward slope resistance r 3.96 m
t
T = 150 C
J
Threshold voltage V 0.74 V
F(TO)
T = 25 C 0.1
J
Maximum reverse leakage current I V = Rated V mA
RM R RRM
T = 150 C 1.0
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS
Maximum junction and storage
T , T -40 to +150 C
J Stg
temperature range
Maximum thermal resistance,
R DC operation 0.35
thJC
unction to case
Maximum thermal resistance,
R 40 C/W
thJA
junction to ambient
Typical thermal resistance,
R Mounting surface, smooth, and greased 0.2
thCS
case to heatsink
6g
Approximate weight
0.21 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
60EPS08
Marking device Case style TO-247AC modified (JEDEC)
60EPS12
Revision: 12-Feb-16 Document Number: 94345
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000