VS-95SQ015, VS-95SQ015-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 9 A FEATURES 125 C T operation (V < 5 V) J R Optimized for OR-ing applications Cathode Anode Ultralow forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability DO-204AR High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC Package DO-204AR Designed and qualified for commercial level I 9 A F(AV) Halogen-free according to IEC 61249-2-21 definition V 15 V R (-M3 only) V at I 0.25 V F F DESCRIPTION I max. 348 mA at 100 C RM The VS-95SQ015... axial leaded Schottky rectifier has been T max. 100 C J optimized for ultralow forward voltage drop specifically for Diode variation Single die the OR-ing of parallel power supplies. The proprietary E 4.5 mJ barrier technology allows for reliable operation up to 100 C AS junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 9A F(AV) V 15 V RRM I t = 5 s sine 2900 A FSM p V 9 Apk, T = 75 C 0.25 V F J T Range - 55 to 100 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-95SQ015 VS-95SQ015-M3 UNITS Maximum DC reverse voltage V R 15 15 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 55 C, rectangular waveform 9 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse 2900 Following any rated load non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 400 RRM See fig. 7 Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 9 mH 4.5 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1A AR Frequency limited by, T maximum V = 3 x V typical J A R Revision: 09-Sep-11 Document Number: 93419 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-95SQ015, VS-95SQ015-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 9 A 0.31 T = 25 C J 18 A 0.37 Maximum forward voltage drop (1) V V FM See fig. 1 9 A 0.25 T = 75 C J 18 A 0.31 V = 12 V 310 R T = 100 C J V = 5 V 190 Maximum reverse leakage current R (1) I mA RM See fig. 2 T = 25 C 7 J V = Rated V R R T = 100 C 348 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C 1300 pF T R DC Typical series inductance L Measured lead to lead 5 mm from body 10.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T - 55 to 125 J C Maximum storage temperature range T - 55 to 150 Stg Maximum thermal resistance, DC operation see fig. 4 R 8.0 thJL junction to lead 1/8 lead length C/W Typical thermal resistance, R 44 thJA junction to air 1.4 g Approximate weight 0.049 oz. Marking device Case style DO-204AR (JEDEC) 95SQ015 Revision: 09-Sep-11 Document Number: 93419 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000