BAS386 Vishay Semiconductors Small Signal Schottky Diode Features Integrated protection ring against static discharge Very low forward voltage AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC 9612315 and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition Applications Mechanical Data Applications where a very low forward voltage is Case: MicroMELF required Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10 k per 13 reel (8 mm tape), 10 k/box TR/2.5 k per 7 reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks V = 50 V BAS386 BAS386-TR3 or BAS386-TR Tape and Reel R Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit V Reverse voltage 50 V R t = 10 ms I Peak forward surge current 5A p FSM t 1 s I Repetitive peak forward current 500 mA p FRM I Forward continuous current 200 mA F Average forward current I 200 mA FAV Thermal Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit on PC board R Junction to ambient air 320 K/W thJA 50 mm x 50 mm x 1.6 mm T Junction temperature 125 C j Storage temperature range T - 65 to + 150 C stg Document Number 85505 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Rev. 2.0, 23-Jul-10 1BAS386 Vishay Semiconductors Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min. Typ. Max. Unit I = 0.1 mA V 300 mV F F I = 1 mA V 380 mV F F Forward voltage I = 10 mA V 450 mV F F I = 30 mA V 600 mV F F I = 100 mA V 900 mV F F V = 40 V I Reverse current 5A R R V = 1 V, f = 1 MHz C Diode capacitance 8pF R D Typical Characteristics T = 25 C, unless otherwise specified amb 500 1000 V = 50 V 450 R T = 125 C j 400 100 350 T = 25 C 300 j 10 250 P - Limit R at 100 % V 200 R 150 1 P - Limit R = 540 K/W thJA R 100 at 80 %V R 50 0.1 0 0 0.5 1.0 1.5 25 50 75 100 125 150 15829 15827 T - Junction Temperature (C) V - Forward Voltage (V) j F Figure 1. Max. Reverse Power Dissipation vs. Figure 3. Forward Current vs. Forward Voltage Junction Temperature 10000 10 9 V = V R RRM f = 1 MHz 8 1000 7 6 100 5 4 3 10 2 1 1 0 0.1 1 10 100 25 50 75 100 125 150 15828 T - Junction Temperature (C) 15830 V - Reverse Voltage (V) R j Figure 2. Reverse Current vs. Junction Temperature Figure 4. Diode Capacitance vs. Reverse Voltage www.vishay.com Document Number 85505 For technical questions within your region, please contact one of the following: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 2 Rev. 2.0, 23-Jul-10 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R C - Diode Capacitance (pF) I - Forward Current (A) D F