BAS386 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES Integrated protection ring against static discharge Very low forward voltage AEC-Q101 qualified Material categorization: for definitions of compliance please see DESIGN SUPPORT TOOLS click logo to get started www.vishay.com/doc 99912 APPLICATIONS Models Available Applications where a very low forward voltage is required MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10K per 13 reel (8 mm tape), 10K/box TR/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS386 V = 50 V BAS386-TR3 or BAS386-TR Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 50 V R Peak forward surge current t = 10 ms I 5A p FSM Repetitive peak forward current t 1 s I 500 mA p FRM Forward continuous current I 200 mA F Average forward current I 200 mA FAV THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Junction to ambient air R 320 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 0.1mA V 300 mV F F I = 1 mA V 380 mV F F Forward voltage I = 10 mA V 450 mV F F I = 30 mA V 600 mV F F I = 100 mA V 900 mV F F Reserve current V = 40 V I 5A R R Diode capacitance V = 1 V, f = 1 MHz C 8pF R D Rev. 2.1, 02-Jun-17 Document Number: 85505 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS386 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 500 9 V = 50 V 450 R f = 1 MHz 8 400 7 350 6 300 5 250 P - Limit R 4 at 100 %V 200 R 3 150 P - Limit R = 540 K/W thJA R 2 100 at 80 %V R 1 50 0 0 0.1 1 10 100 25 50 75 100 125 150 V - Reverse Voltage (V) 15830 R 15827 T - Junction Temperature (C) j Fig. 1 - Max. Reverse Power Dissipation vs. Fig. 4 - Diode Capacitance vs. Reverse Voltage Junction Temperature 10000 0.71 1.3 1.27 V =V R RRM 0.152 1000 0.355 100 10 1 2.5 25 50 75 100 125 150 24 95 10329 15828 T - Junction Temperature (C) j Fig. 2 - Reverse Current vs. Junction Temperature Fig. 5 - Board for R Definition (in mm) thJA 1000 T = 125 C j 100 T = 25 C j 10 1 0.1 0 0.5 1.0 1.5 15829 V - Forward Voltage (V) F Fig. 3 - Forward Current vs. Forward Voltage Rev. 2.1, 02-Jun-17 Document Number: 85505 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P - Reverse Power Dissipation (mW) I - Forward Current (A) R F R C - Diode Capacitance (pF) D 25 10 9.9